收藏本站
Si4966DY
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
0.6
1.5
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 12 V
V DS = 20 V, V GS = 0 V
V DS = 20 V, V GS = 0 V, T J = 55 °C
V DS ≥ 5 V, V GS = 4.5 V
20
± 100
1
5
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = 4.5 V, I D = 7.1 A
V GS = 2.5 V, I D = 6.0 A
V DS = 10 V, I D = 7.1 A
0.019
0.025
27
0.025
0.035
Ω
S
Diode Forward Voltage
a
V SD
I S = 1.7 A, V GS = 0 V
1.2
V
Dynamic b
Total Gate Charge
Q g
25
50
Gate-Source Charge
Gate-Drain Charge
Q gs
Q gd
V DS = 10 V, V GS = 4.5 V, I D = 7.1 A
6.5
4
nC
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
R g
t d(on)
t r
t d(off)
t f
t rr
f = 1 MHz
V DD = 10 V, R L = 10 Ω
I D ? 1 A, V GEN = 4.5 V, R g = 6 Ω
I F = 1.7 A, dI/dt = 100 A/μs
1.6
40
40
90
40
40
2.7
60
60
150
60
80
Ω
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70718
S09-0869-Rev. D, 18-May-09
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI4972DY-T1-GE3 MOSFET N-CH DUAL 30V 8-SOIC
SI4973DY-T1-GE3 MOSFET 2P-CH 30V 5.8A 8SOIC
SI5040-D-GM IC TXRX XFP 10GBPS 32LGA
SI5402DC-T1-GE3 MOSFET N-CH D-S 30V 1206-8
SI5403DC-T1-GE3 MOSFET P-CH 30V 6A 1206-8
SI5432DC-T1-GE3 MOSFET N-CH 20V 6A 1206-8
SI5440DC-T1-GE3 MOSFET N-CH D-S 30V 1206-8
SI5441DC-T1-GE3 MOSFET P-CH D-S 20V 1206-8
相关代理商/技术参数
SI4967DY 功能描述:MOSFET 12V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4967DY-E3 功能描述:MOSFET 12V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4967DY-T1 功能描述:MOSFET 12V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4967DY-T1-E3 功能描述:MOSFET 12V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4967DY-T1-GE3 功能描述:MOSFET 12V 7.5A 2.0W 23mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4971DY 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 25-V (G-S) MOSFET
SI4971DY-T1 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 25-V (G-S) MOSFET
SI4971DY-T1-E3 功能描述:MOSFET 30V 7.2A 1.1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube